SQD35N05-26L-GE3

new-10%

Manufacturer part number:SQD35N05-26L-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK

Case Package:SOT-23

Datasheet:SQD35N05-26L-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	TO-252, (D-Pak)
Weight	1.437803g
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Tolerance	1%
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Temperature Coefficient	50 ppm/°C
Resistance	2.26Ohm
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Composition	Wirewound
Power Rating	3W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Power Dissipation	50W
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1175pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Rise Time	18ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Input Capacitance	1.175nF
Drain to Source Resistance	20mOhm
Rds On Max	20 mΩ
Diameter	4.75mm
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant