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SI4322DY-T1-E3

SI4322DY-T1-E3

SI4322DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 18A 8-SOIC

SOT-23

SI4322DY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 5.4W Tc
Power Dissipation 3.1W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 36ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.64nF
Drain to Source Resistance 8.5mOhm
Rds On Max 8.5 mΩ
Height 1.55mm
Length 5mm
Width 4mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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