FDD5614P

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FDD5614P

Manufacturer part number:FDD5614P

Manufacturer:ON Semiconductor

Description:FDD5614P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD5614P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 9 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	100MOhm
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	-15A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Voltage	60V
Power Dissipation-Max	3.8W Ta 42W Tc
Element Configuration	Single
Current	15A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	759pF @ 30V
Current - Continuous Drain (Id) @ 25°C	15A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	-15A
Threshold Voltage	-1.6V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
Avalanche Energy Rating (Eas)	90 mJ
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-1.6 V
Height	2.39mm
Length	6.73mm
Width	6.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free