SI4362BDY-T1-E3

new-10%

Manufacturer part number:SI4362BDY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 29A 8-SOIC

Case Package:SOT-23

Datasheet:SI4362BDY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3W Ta 6.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 19.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 15V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	19.8A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	29A
Drain-source On Resistance-Max	0.0046Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
RoHS Status	ROHS3 Compliant