SI4446DY-T1-GE3

new-10%

Manufacturer part number:SI4446DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 3.9A 8-SOIC

Case Package:SOT-23

Datasheet:SI4446DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 20V
Current - Continuous Drain (Id) @ 25°C	3.9A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	3.9A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.04Ohm
Pulsed Drain Current-Max (IDM)	30A
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant