SI2351DS-T1-GE3

new-10%

Manufacturer part number:SI2351DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 3.0A 2.1W 115 mohms @ 4.5V

Case Package:SOT-23

Datasheet:SI2351DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Packaging	Cut Tape (CT)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	115MOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	Other Transistors
Max Power Dissipation	1W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	9 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	115m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2.2A
DS Breakdown Voltage-Min	20V
Nominal Vgs	-1.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free