NTB13N10T4G

new-10%

Manufacturer part number:NTB13N10T4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 13A D2PAK

Case Package:SOT-23

Datasheet:NTB13N10T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Powers
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	13A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	64.7W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	64.7W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.165Ohm
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	85 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free