SI4462DY-T1-E3

new-10%

Manufacturer part number:SI4462DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 1.15A 8-SOIC

Case Package:SOT-23

Datasheet:SI4462DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Packaging	Cut Tape (CT)
Published	2017
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	17mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.3W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	1.3W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	480mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	1.15A Ta
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	200V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	480mOhm
Rds On Max	480 mΩ
Nominal Vgs	4 V
Height	1.5494mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free