IPP052NE7N3GHKSA1

new-10%

Manufacturer part number:IPP052NE7N3GHKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 80A TO220-3

Case Package:SOT-23

Datasheet:IPP052NE7N3GHKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	PG-TO220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	150W Tc
Element Configuration	Single
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 91μA
Input Capacitance (Ciss) (Max) @ Vds	4750pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Input Capacitance	4.75nF
Drain to Source Resistance	5.2mOhm
Rds On Max	5.2 mΩ
Height	15.95mm
Length	10.36mm
Width	4.57mm
Radiation Hardening	No
RoHS Status	RoHS Compliant