SI4470EY-T1-GE3

new-10%

Manufacturer part number:SI4470EY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 60V 12.7A 3.75W 11mohm @ 10V

Case Package:SOT-23

Datasheet:SI4470EY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.85W Ta
Element Configuration	Single
Power Dissipation	1.85W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	9A Ta
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	11mOhm
Rds On Max	11 mΩ
Nominal Vgs	2 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant