SI4620DY-T1-GE3

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Manufacturer part number:SI4620DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 6A 8-SOIC

Case Package:SOT-23

Datasheet:SI4620DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	LITTLE FOOT®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2W Ta 3.1W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1040pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6A Ta 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.035Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	40A
FET Feature	Schottky Diode (Isolated)
Radiation Hardening	No
RoHS Status	ROHS3 Compliant