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IRFS52N15DPBF

IRFS52N15DPBF

IRFS52N15DPBF

Infineon Technologies

IRFS52N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFS52N15DPBF Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 32MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 60A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3.8W Ta 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 320W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 47ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 240A
Dual Supply Voltage 150V
Avalanche Energy Rating (Eas) 470 mJ
Nominal Vgs 5 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
IRFS52N15DPBF Product Details

IRFS52N15DPBF Description


IRFS52N15DPBF is an N-channel Power MOSFET from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of IRFS52N15DPBF is -55°C~175°C TJ and its maximum power dissipation is 230W Tc. IRFS52N15DPBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads + Tab), and TO-263AB packaging way. Turn On Delay Time of IRFS52N15DPBF is 16 ns and its Turn-Off Delay Time is 28 ns.



IRFS52N15DPBF Features


  • Low Gate-to-Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective COSS to Simplify

  • Fully Characterized Avalanche Voltage and Current

  • Lead-Free



IRFS52N15DPBF Applications

  • High-frequency DC-DC converters

  • Plasma Display Panel


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