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SI4831DY-T1-E3

SI4831DY-T1-E3

SI4831DY-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 5A 8-SOIC

SOT-23

SI4831DY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series LITTLE FOOT®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.045Ohm
DS Breakdown Voltage-Min 30V
FET Feature Schottky Diode (Isolated)
Height 1.55mm
Length 5mm
Width 4mm
RoHS Status ROHS3 Compliant

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