SI4825DY-T1-E3

new-10%

Manufacturer part number:SI4825DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 8.1A 8-SOIC

Case Package:SOT-23

Datasheet:SI4825DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	14mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Power Dissipation	1.5W
Turn On Delay Time	15 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	14mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8.1A Ta
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	97 ns
Continuous Drain Current (ID)	-9.2A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Drain to Source Resistance	14mOhm
Rds On Max	14 mΩ
Nominal Vgs	-3 V
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free