SI4880DY-T1-GE3

new-10%

Manufacturer part number:SI4880DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 13A 8-SOIC

Case Package:SOT-23

Datasheet:SI4880DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
JESD-30 Code	R-PDSO-G8
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 5V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.0085Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	50A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant