NTA4151PT1

new-10%

Manufacturer part number:NTA4151PT1

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 0.76A SOT-416

Case Package:SOT-23

Datasheet:NTA4151PT1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	235
Reach Compliance Code	not_compliant
Current Rating	-760mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	301mW Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	301mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	156pF @ 5V
Current - Continuous Drain (Id) @ 25°C	760mA Tj
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 4.5V
Rise Time	8.2ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	8.2 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	760mA
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.76A
Drain-source On Resistance-Max	0.36Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead