SI5411EDU-T1-GE3

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Manufacturer part number:SI5411EDU-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET -12V [email protected] -25A P-Ch T-FET

Case Package:SOT-23

Datasheet:SI5411EDU-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Single
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Channels	1
Power Dissipation-Max	3.1W Ta 31W Tc
Element Configuration	Single
Turn On Delay Time	30 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	8.2m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 6V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 8V
Rise Time	30ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free