SI5475BDC-T1-GE3

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Manufacturer part number:SI5475BDC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 6A 1206-8

Case Package:SOT-23

Datasheet:SI5475BDC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Power Dissipation-Max	2.5W Ta 6.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	28m Ω @ 5.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 6V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	40nC @ 8V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	72 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant