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IRF2807ZSTRRPBF

IRF2807ZSTRRPBF

IRF2807ZSTRRPBF

Infineon Technologies

MOSFET N-CH 75V 75A D2PAK

SOT-23

IRF2807ZSTRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 170W Tc
Power Dissipation 170W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.4mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 120ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 3.27nF
Drain to Source Resistance 2mOhm
Rds On Max 9.4 mΩ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant

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