SI5484DU-T1-GE3

new-10%

Manufacturer part number:SI5484DU-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 12A PPAK CHIPFET

Case Package:SOT-23

Datasheet:SI5484DU-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Single
Number of Pins	8
Supplier Device Package	PowerPAK® ChipFet Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3.1W Ta 31W Tc
Element Configuration	Single
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 7.6A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Input Capacitance	1.6nF
Drain to Source Resistance	16mOhm
Rds On Max	16 mΩ
Height	750μm
Length	3mm
Width	1.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant