SI5513CDC-T1-GE3

new-10%

Manufacturer part number:SI5513CDC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 20V 4A 1206-8

Case Package:SOT-23

Datasheet:SI5513CDC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	150mOhm
Max Power Dissipation	3.1W
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI5513
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.7W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	285pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A 3.7A
Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 5V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	600 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free