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SIZF916DT-T1-GE3

SIZF916DT-T1-GE3

SIZF916DT-T1-GE3

Vishay Siliconix

MOSFET N-CH DUAL 30V

SOT-23

SIZF916DT-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 3.4W Ta 26.6W Tc 4W Ta 60W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA, 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V 4320pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 95nC @ 10V
Drain to Source Voltage (Vdss) 30V
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

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