SI5515CDC-T1-E3

new-10%

Manufacturer part number:SI5515CDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 20V 4A 1206-8

Case Package:SOT-23

Datasheet:SI5515CDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	3.1W
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI5515
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	10 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	632pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	11.3nC @ 5V
Rise Time	32ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	6 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.036Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	800 mV
Height	1.1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant