IPD60R600P6

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IPD60R600P6

Manufacturer part number:IPD60R600P6

Manufacturer:Infineon Technologies

Description:IPD60R600P6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPD60R600P6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	CoolMOS™ P6
JESD-609 Code	e3
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	63W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds	557pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	7.3A
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	133 mJ
RoHS Status	ROHS3 Compliant