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IRF7807D1PBF

IRF7807D1PBF

IRF7807D1PBF

Infineon Technologies

IRF7807D1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7807D1PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Series FETKY™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 25MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating8.3A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Forward Current3.5A
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Forward Voltage500mV
Continuous Drain Current (ID) 8.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Feature Schottky Diode (Isolated)
Nominal Vgs 1 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4024 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.068402$1.068402
10$1.007927$10.07927
100$0.950875$95.0875
500$0.897052$448.526
1000$0.846275$846.275

IRF7807D1PBF Product Details

IRF7807D1PBF Description

The FETKY? family of Co-Pack HEXFET?MOSFETs and Schottky diodes offers the designer an innovative, board space-saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.



IRF7807D1PBF Features

Co-Pack N-channel HEXFET" Power MOSFET

and Schotly Diode

Ideal for Synchronous Rectifiers in DC-DC

Comforters Up to 5A Output

Low Conduction Losses

Low Switching Losses

Low Vf Schottky Rectifier

Lead-Free


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