SI5857DU-T1-GE3

new-10%

Manufacturer part number:SI5857DU-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 6A PPAK CHIPFET

Case Package:SOT-23

Datasheet:SI5857DU-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Number of Pins	8
Supplier Device Package	PowerPAK® ChipFet Dual
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	2.3W Ta 10.4W Tc
Turn On Delay Time	5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	12V
Input Capacitance	480pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	58mOhm
Rds On Max	58 mΩ
Height	750μm
Length	3mm
Width	1.9mm
RoHS Status	ROHS3 Compliant