SI5908DC-T1-E3

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Manufacturer part number:SI5908DC-T1-E3

Manufacturer:Vishay Siliconix

Description:Dual N-Channel 20-V (D-S) Mosfet Rohs Compliant: No

Case Package:SOT-23

Datasheet:SI5908DC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Max Power Dissipation	1.1W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI5908
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.4A
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Rise Time	36ns
Fall Time (Typ)	36 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	5.9A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4.4A
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant