SI6413DQ-T1-E3

new-10%

Manufacturer part number:SI6413DQ-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 7.2A 8TSSOP

Case Package:SOT-23

Datasheet:SI6413DQ-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-TSSOP
Weight	157.991892mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	10mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.05W Ta
Element Configuration	Single
Turn On Delay Time	55 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 400μA
Current - Continuous Drain (Id) @ 25°C	7.2A Ta
Gate Charge (Qg) (Max) @ Vgs	105nC @ 5V
Rise Time	120ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	305 ns
Continuous Drain Current (ID)	7.2A
Gate to Source Voltage (Vgs)	8V
Drain to Source Resistance	10mOhm
Rds On Max	10 mΩ
Height	1mm
Length	3mm
Width	4.4mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free