FQD12P10TM

new-10%

Manufacturer part number:FQD12P10TM

Manufacturer:ON Semiconductor

Description:FQD12P10TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQD12P10TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	QFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-9.4A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.5W Ta 50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	290m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.4A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	160ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	9.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	37.6A
Avalanche Energy Rating (Eas)	370 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free