SI6465DQ-T1-GE3

new-10%

Manufacturer part number:SI6465DQ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 8V 8.8A 8TSSOP

Case Package:SOT-23

Datasheet:SI6465DQ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-TSSOP
Weight	157.991892mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Power Dissipation	1.5W
Turn On Delay Time	30 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	12mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	8.8A Ta
Gate Charge (Qg) (Max) @ Vgs	80nC @ 4.5V
Rise Time	60ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	130 ns
Turn-Off Delay Time	210 ns
Continuous Drain Current (ID)	8.8A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-8V
Drain to Source Resistance	12mOhm
Rds On Max	12 mΩ
Height	1mm
Length	3mm
Width	4.4mm
RoHS Status	ROHS3 Compliant