SUD50N04-16P-E3

new-10%

Manufacturer part number:SUD50N04-16P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 9.8A TO252

Case Package:SOT-23

Datasheet:SUD50N04-16P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 35.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1655pF @ 20V
Current - Continuous Drain (Id) @ 25°C	9.8A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	9.8A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	20 mJ
Height	2.39mm
Length	6.73mm
Width	6.22mm
RoHS Status	ROHS3 Compliant