SI6467BDQ-T1-E3

new-10%

Manufacturer part number:SI6467BDQ-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 12V 8A 1.5W

Case Package:SOT-23

Datasheet:SI6467BDQ-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5mOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	Other Transistors
Max Power Dissipation	1.05W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.05W
Turn On Delay Time	45 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	12.5m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 450μA
Current - Continuous Drain (Id) @ 25°C	6.8A Ta
Gate Charge (Qg) (Max) @ Vgs	70nC @ 4.5V
Rise Time	85ns
Fall Time (Typ)	85 ns
Turn-Off Delay Time	220 ns
Continuous Drain Current (ID)	6.8A
Threshold Voltage	450mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free