SI7137DP-T1-GE3

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SI7137DP-T1-GE3

Manufacturer part number:SI7137DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 60A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7137DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	1.95mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	6.25W Ta 104W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.25W
Case Connection	DRAIN
Turn On Delay Time	100 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.95m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	20000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	585nC @ 10V
Rise Time	150ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	230 ns
Continuous Drain Current (ID)	-60A
Threshold Voltage	-1.4V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	42A
Drain to Source Breakdown Voltage	-20V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.4 V
Height	1.12mm
Length	6.15mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free