SI7236DP-T1-GE3

new-10%

Manufacturer part number:SI7236DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V 60A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7236DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	46W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7236
Pin Count	8
JESD-30 Code	R-XDSO-C6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 20.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Rise Time	15ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	20.7A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	60A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant