SI7328DN-T1-E3

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Manufacturer part number:SI7328DN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 35A PPAK 1212-8

Case Package:SOT-23

Datasheet:SI7328DN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.78W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.6m Ω @ 18.9A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2610pF @ 15V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	31.5nC @ 4.5V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	18.9A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.0066Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
Height	1.04mm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant