SI7382DP-T1-E3

new-10%

Manufacturer part number:SI7382DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 14A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7382DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	4.7mOhm
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-PDSO-N8
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.7m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	14A Ta
Gate Charge (Qg) (Max) @ Vgs	40nC @ 4.5V
Rise Time	16ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	67 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	24A
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	45 mJ
Height	1.04mm
Length	4.9mm
Width	5.89mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free