SI7404DN-T1-GE3

new-10%

Manufacturer part number:SI7404DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 13.3A 3.8W 13mohm @ 10V

Case Package:SOT-23

Datasheet:SI7404DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Case Code (Metric)	1212
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 13.3A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8.5A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Rise Time	39ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	8.5A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant