SI7409ADN-T1-GE3

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Manufacturer part number:SI7409ADN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 11A 3.8W 19mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI7409ADN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 11A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	7A Ta
Gate Charge (Qg) (Max) @ Vgs	40nC @ 4.5V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	115 ns
Continuous Drain Current (ID)	-11A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.019Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	40A
Nominal Vgs	-1.5 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant