SI7447ADP-T1-GE3

new-10%

Manufacturer part number:SI7447ADP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 35A PPAK 1212-8

Case Package:SOT-23

Datasheet:SI7447ADP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Power Dissipation-Max	5.4W Ta 83.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.4W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4650pF @ 15V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	98 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	21.5A
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.0065Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant