SI7452DP-T1-E3

new-10%

Manufacturer part number:SI7452DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 11.5A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7452DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.9W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.3m Ω @ 19.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	11.5A Ta
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	11.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Height	1.04mm
Length	4.9mm
Width	5.89mm
RoHS Status	ROHS3 Compliant