IRFL014NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFL014NPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
160m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.9A Ta
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IRFL014NPBF Product Details
IRFL014NPBF Description
International Rectifier's Fifth Generation HEXFET? MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET? power MOSFETs are renowned for.
The SOT-223 package is made to be surface-mounted utilizing infrared, vapor phase, or wave soldering processes.
In addition to having the same simple automatic pick-and-place functionality as regular SOT or SOIC packages, this package's special design offers increased thermal performance thanks to a larger tab for heatsinking. One Watt of power can be lost in a typical surface mount application.