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SI7461DP-T1-GE3

SI7461DP-T1-GE3

SI7461DP-T1-GE3

Vishay Siliconix

Single N-Channel 60 V 0.00625 Ohm Surface Mount Power MosFet - POWERPAK-SO-8

SOT-23

SI7461DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 6.25mOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14.5m Ω @ 14.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.6A Ta
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 205 ns
Continuous Drain Current (ID) -14.4A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 60V
Max Junction Temperature (Tj) 150°C
Height 1.17mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.01266 $3.03798
6,000 $0.97752 $5.86512

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