SI7462DP-T1-E3

new-10%

Manufacturer part number:SI7462DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 2.6A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7462DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Packaging	Cut Tape (CT)
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	130mOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Max Power Dissipation	1.9W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	15ns
Fall Time (Typ)	15 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	4.1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.6A
Drain to Source Breakdown Voltage	200V
Height	1.0668mm
Length	5.969mm
Width	5.0038mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free