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NTR4502PT1G

NTR4502PT1G

NTR4502PT1G

ON Semiconductor

NTR4502PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTR4502PT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 155MOhm
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.95A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 400mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 5.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.13A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 1.95A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -3 V
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.53000 $0.53
500 $0.5247 $262.35
1000 $0.5194 $519.4
1500 $0.5141 $771.15
2000 $0.5088 $1017.6
2500 $0.5035 $1258.75
NTR4502PT1G Product Details

NTR4502PT1G Description


NTR4502PT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. It is able to reduce conduction losses based on its low RDS (on). Its SOT-23 package is used to save board space. 



NTR4502PT1G Features


  • Low RDS (on)

  • High efficiency

  • Low-voltage gate drive

  • Leading planar technology

  • Available in the SOT-23 package



NTR4502PT1G Applications


  • DC to DC conversion

  • Battery charging circuits

  • Load/Power switch for portables and computing

  • Motherboard, notebooks, camcorders, digital cameras, etc.


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