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SIR808DP-T1-GE3

SIR808DP-T1-GE3

SIR808DP-T1-GE3

Vishay Siliconix

MOSFET 25 Volts 20 Amps 29.8 Watts

SOT-23

SIR808DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-C5
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 29.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.9m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 815pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 22.8nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 22 mJ
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.062072 $2.062072
10 $1.945351 $19.45351
100 $1.835237 $183.5237
500 $1.731356 $865.678
1000 $1.633354 $1633.354

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