SI7495DP-T1-GE3

new-10%

Manufacturer part number:SI7495DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 13A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7495DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	6.5mOhm
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Turn On Delay Time	100 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	6.5m Ω @ 21A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 1mA
Current - Continuous Drain (Id) @ 25°C	13A Ta
Gate Charge (Qg) (Max) @ Vgs	140nC @ 5V
Rise Time	200ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	230 ns
Turn-Off Delay Time	350 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Height	1.04mm
Length	4.9mm
Width	5.89mm
RoHS Status	ROHS3 Compliant