SI7674DP-T1-E3

new-10%

Manufacturer part number:SI7674DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 40A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7674DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	5.4W Ta 83W Tc
Element Configuration	Single
Power Dissipation	5.4W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5910pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	210ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	5.91nF
Drain to Source Resistance	3.3mOhm
Rds On Max	3.3 mΩ
RoHS Status	ROHS3 Compliant