SI7703EDN-T1-GE3

new-10%

Manufacturer part number:SI7703EDN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI7703EDN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	48m Ω @ 6.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 800μA
Current - Continuous Drain (Id) @ 25°C	4.3A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	-6.3A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4.3A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	20A
FET Feature	Schottky Diode (Isolated)
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant