SI7980DP-T1-GE3

new-10%

Manufacturer part number:SI7980DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V 8A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7980DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Max Power Dissipation	21.9W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7980
Pin Count	8
JESD-30 Code	R-XDSO-C6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.4W
Case Connection	DRAIN
Turn On Delay Time	18 ns
Power - Max	19.8W 21.9W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	30A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant