SI8405DB-T1-E3

new-10%

Manufacturer part number:SI8405DB-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 3.6A 2X2 4-MFP

Case Package:SOT-23

Datasheet:SI8405DB-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Supplier Device Package	4-Microfoot
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.47W Ta
Element Configuration	Single
Power Dissipation	2.77W
Turn On Delay Time	16 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	55mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.6A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 4.5V
Rise Time	32ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	-3.6A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Drain to Source Resistance	55mOhm
Rds On Max	55 mΩ
Height	360μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant